Download Dry Etching for VLSI by A.J. van Roosmalen, J.A.G. Baggerman, S.J.H. Brader PDF

By A.J. van Roosmalen, J.A.G. Baggerman, S.J.H. Brader

This quantity is devoted to the sector of dry (plasma) etching, as utilized in silicon semiconductor processing.

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S c a t t e r i n g , etc. Since there are no further A f i n a l word on t h i s mobility model. scattering quantities I t i s based on comparing α of the conduction c h a r a c t e r i s t i c of t h i s theory, i t with the magnitude of 1/f noise in other proper­ f i c u l t to design experiments that can confirm t i e s . I t does not say anything about the value the model. We can now d i s c u s s three such exper­ α should have. 2 χ 10 iments that were put forward in defence of has often been found.

S . R a l l s , W . J . Skocpol et a l . , Phys. Rev. L 5 2 , 228 (84) 29. K. H. Duh. A. v . d . Ziel , Physica 119 B , 249 (83) 30. E. L o h , J . Appl. Phys. 5 6 , 3022 (84) 3 1 . C. M. Huybers, J . A p p l . P h y s . 54, 2504 (83) 32. J . Kilmer, A. v . d . Z i e l , G. Bosman, S o l i d State Electron. 2 6 , 71 (83) 3 3 . M. M i h a i l a , Phys. L e t t . 104A, 157 (84) 34. M. M i h a i l a , Phys. L e t t . 107A, 465 (85) 35. P . H . Handel, Phys. Rev. A 2 2 5 , 745 (80) 36. J . H. E l l i s , C M .

REFERENCES 1. J. , 2. 1981). B. Sakmann and E. , 1983). 3. B. Hille, Ionic Channels of Biological Membranes (Sinauer, Sunderland, MA, 1984). 4. J. Sigworth, ll 300 5. L. Hodgkin Physiol. Fig. 10 underlying Heart-like action potential and currents, from 300 slow Κ chan­ nels, 500 Na channels, and 500 Ca channels in a 1 farad). mV, μτη^ patch of The potential, is in free-run after scale in millivolts membrane J. _47 (1983) at -100 t = 0. Vertical or picoamps (bottom); horizontal scales in millisecs.

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